A theory of low-field, high-carrier-density breakdown in semiconductors

K. Kambour, Harold P. Hjalmarson, Charles W. Myles

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Collective impact ionization has been used to explain lock-on, an optically-triggered electrical breakdown occurring in some photoconductive semiconductor switches (PCSS's). Lock-on is observed in GaAs and InP but not in Si or GaP. Here, a rate equation implementation of collective impact ionization is discussed, and it leads to new insights both about intrinsic electrical breakdown in insulating materials in general and about lock-on specifically. In this approach, lock-on and electrical breakdown are steady state processes controlled by competition between carrier generation and recombination. This leads to theoretical definitions for both the lock-on field and the breakdown field. Our results show that lock-on is a carrier-density dependent form of electrical breakdown which exists in principle in all semiconductors. Results for GaAs, InP, Si, and GaP are discussed.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1269-1270
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period07/26/0407/30/04

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    Kambour, K., Hjalmarson, H. P., & Myles, C. W. (2005). A theory of low-field, high-carrier-density breakdown in semiconductors. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1269-1270). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994574