TY - JOUR
T1 - A subthreshold-MOSFETs-based scattered relative temperature sensor front-end with a non-calibrated ± 2.5° C 3σ relative inaccuracy From-40° C to 100° C
AU - Lu, Li
AU - Vosooghi, Bozorgmehr
AU - Chen, Jinghong
AU - Li, Changzhi
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - This paper presents a subthreshold MOSFETs-based scattered relative temperature sensor front-end operating at a low supply voltage. Dynamic element matching and dynamic offset cancellation have been implemented to minimize the errors induced by device mismatches. An individual proportional-to-absolute- temperature (PTAT) voltage generator was first implemented to verify the low voltage operation capability and the mismatch-error correction. A low voltage reference circuit has been also designed and tested. A gate-bulk-driven error correction amplifier is proposed in order to minimize the offset error and maintain low voltage operation. The scattered relative temperature sensor front-end was then implemented in AMI 0.5 μ m CMOS process with an array of 5 × 5 sensor nodes across the chip. The minimum supply voltage was measured as 1 V over-40-100° C, with a typical N-/P-type threshold voltage of around 0.8 V and 0.9 V at room temperature, respectively. The measured 3σ relative inaccuracy was less than ± 2.5° C without calibration. To the best of the authors' knowledge, this is the first time that non-calibrated on-chip relative temperature monitoring accuracy is reported. Furthermore, the multi-location thermal monitoring function has been experimentally demonstrated and a 2 °C/mm on-chip temperature gradient was detected.
AB - This paper presents a subthreshold MOSFETs-based scattered relative temperature sensor front-end operating at a low supply voltage. Dynamic element matching and dynamic offset cancellation have been implemented to minimize the errors induced by device mismatches. An individual proportional-to-absolute- temperature (PTAT) voltage generator was first implemented to verify the low voltage operation capability and the mismatch-error correction. A low voltage reference circuit has been also designed and tested. A gate-bulk-driven error correction amplifier is proposed in order to minimize the offset error and maintain low voltage operation. The scattered relative temperature sensor front-end was then implemented in AMI 0.5 μ m CMOS process with an array of 5 × 5 sensor nodes across the chip. The minimum supply voltage was measured as 1 V over-40-100° C, with a typical N-/P-type threshold voltage of around 0.8 V and 0.9 V at room temperature, respectively. The measured 3σ relative inaccuracy was less than ± 2.5° C without calibration. To the best of the authors' knowledge, this is the first time that non-calibrated on-chip relative temperature monitoring accuracy is reported. Furthermore, the multi-location thermal monitoring function has been experimentally demonstrated and a 2 °C/mm on-chip temperature gradient was detected.
KW - Low voltage
KW - multi-location thermal monitoring
KW - subthreshold MOSFETs
KW - temperature sensor
UR - http://www.scopus.com/inward/record.url?scp=84877724849&partnerID=8YFLogxK
U2 - 10.1109/TCSI.2013.2249131
DO - 10.1109/TCSI.2013.2249131
M3 - Article
AN - SCOPUS:84877724849
VL - 60
SP - 1104
EP - 1112
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
SN - 1549-8328
IS - 5
M1 - 6494351
ER -