A study on linearity vs. LTE signal bandwidth and supply voltage for high-efficiency SiGe power amplifier design with CW load-pull

J. Tsay, J. Lopez, J. C. Mayeda, T. Hall, B. T. Nukala, D. Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper shows a highly-efficient SiGe power amplifier (PA) design where its linearity, power-added efficiency (PAE) and POUT are studied vs. different LTE 16QAM signal BW and supply voltage. The monolithic PA, designed in 0.35-μm SiGe BiCMOS technology with through-silicon via (TSV) using continuous wave (CW) load-pull, passes the stringent LTE spectrum emission mask (SEM) at average linear POUT = 23.5/23.1/23.1 dBm with 48.0/45.2/45.0% PAE for LTE 5/10/20 MHz inputs. The adjacent channel leakage ratios ACLR1/ACLR2 exhibit opposite trends vs. increasing signal BW at POUT below compression (P1dB = 22.3 dBm), while past compression ACLR1/ACLR2 increase with larger BW, with some ACLR2 asymmetry at 10/20 MHz. Lowering the supply voltage has a larger effect on ACLR degradation than higher signal BW. The data suggests that static CW load-pull data is useful for PA design even for 16QAM modulated signal but cannot accurately predict SiGe PA's linearity performance.

Original languageEnglish
Title of host publication2016 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509027552
DOIs
StatePublished - Sep 26 2016
Event2016 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2016 - Waco, United States
Duration: Mar 31 2016Apr 1 2016

Publication series

Name2016 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2016

Conference

Conference2016 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2016
CountryUnited States
CityWaco
Period03/31/1604/1/16

Keywords

  • Adjacent channel leakage ratio (ACLR)
  • Continuous-Wave (CW) Load-Pull
  • Long-term evolution (LTE)
  • SiGe power amplifier (SiGe PA)
  • Through-silicon via (TSV)

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    Tsay, J., Lopez, J., Mayeda, J. C., Hall, T., Nukala, B. T., & Lie, D. Y. C. (2016). A study on linearity vs. LTE signal bandwidth and supply voltage for high-efficiency SiGe power amplifier design with CW load-pull. In 2016 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2016 [7577480] (2016 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMCaS.2016.7577480