TY - GEN
T1 - A SiGe bipolar-MOSFET cascode power amplifier with improved linearity for low-power broadband wireless applications
AU - Wu, Ruili
AU - Lopez, Jerry
AU - Li, Yan
AU - Lie, Donald Y.C.
PY - 2013
Y1 - 2013
N2 - In this paper, a novel bipolar-MOSFET (BiFET) cascode differential power amplifier (PA) is proposed and fabricated, showing strong improvement on the linearity performances over those of the conventional bipolar-bipolar cascode PA. The two-stage differential BiFET cascode PA achieves Pout of 25.7 dBm with 52.1% power-added-efficiency (PAE) in the continuous wave (CW) measurement at 900 MHz. A conventional bipolar-bipolar cascode PA is designed in a similar configuration to compare with the BiFET cascode PA performances, using the LTE 16QAM 5/20 MHz signals as inputs. The measurement results show that the BiFET cascode PA significantly improves the linearity performances over those of the conventional bipolar-bipolar cascode PA in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR) and the transmission output spectra. These linearity improvements are more visible at lower P out levels, and become particularly striking as the signal bandwidth increases to 20 MHz. The SiGe PAs are designed and fabricated in a 0.35-m SiGe BiCMOS technology with through-wafer-vias (TWVs) for low-power broadband wireless applications.
AB - In this paper, a novel bipolar-MOSFET (BiFET) cascode differential power amplifier (PA) is proposed and fabricated, showing strong improvement on the linearity performances over those of the conventional bipolar-bipolar cascode PA. The two-stage differential BiFET cascode PA achieves Pout of 25.7 dBm with 52.1% power-added-efficiency (PAE) in the continuous wave (CW) measurement at 900 MHz. A conventional bipolar-bipolar cascode PA is designed in a similar configuration to compare with the BiFET cascode PA performances, using the LTE 16QAM 5/20 MHz signals as inputs. The measurement results show that the BiFET cascode PA significantly improves the linearity performances over those of the conventional bipolar-bipolar cascode PA in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR) and the transmission output spectra. These linearity improvements are more visible at lower P out levels, and become particularly striking as the signal bandwidth increases to 20 MHz. The SiGe PAs are designed and fabricated in a 0.35-m SiGe BiCMOS technology with through-wafer-vias (TWVs) for low-power broadband wireless applications.
KW - Bipolar-MOSFET (BiFET)
KW - LTE
KW - SiGe BiCMOS PA
KW - cascode power amplifier (PA)
KW - linearity
UR - http://www.scopus.com/inward/record.url?scp=84875979001&partnerID=8YFLogxK
U2 - 10.1109/PAWR.2013.6490176
DO - 10.1109/PAWR.2013.6490176
M3 - Conference contribution
AN - SCOPUS:84875979001
SN - 9781467329309
T3 - PAWR 2013 - Proceedings: 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications - 2013 IEEE Radio and Wireless Week, RWW 2013
SP - 22
EP - 24
BT - PAWR 2013 - Proceedings
T2 - 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
Y2 - 20 January 2013 through 23 January 2013
ER -