A SiGe BiCMOS cascode power amplifier with monolithic SOI envelope modulators for high-efficiency envelope tracking

Ruili Wu, Yan Li, Weibo Hu, Jerry Lopez, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a fully differential cascode power amplifier (PA) is designed and fabricated using a 0.35-μm SiGe BiCMOS process. In the continuous wave (CW) measurement, the PA achieves a saturated power (P SAT) of 24.8 dBm at 3.3 V with power-added-efficiency (PAE) above 50% at 2.3 GHz. Two monolithic envelope modulators (EMs) are designed in a 0.18-μm SOI CMOS technology using a switching buck converter stage with two different linear amplifier topologies: a low-dropout (LDO) regulator vs. a conventional class AB Op-Amp. The envelope tracking PA (ET-PA) systems are measured for maximum linear POUT and efficiency with corresponding design trade-offs discussed. The conventional class AB Op-Amp based EM proved better combined efficiency /linearity at 20 dBm POUT with 30% PAE using an LTE 16QAM 5 MHz signal for our assessment.

Original languageEnglish
Title of host publication2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012
DOIs
StatePublished - 2012
Event2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012 - Portland, OR, United States
Duration: Sep 30 2012Oct 3 2012

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012
Country/TerritoryUnited States
CityPortland, OR
Period09/30/1210/3/12

Keywords

  • LDO regulator
  • LTE
  • SOI
  • SiGe power amplifier
  • envelope modulator
  • envelope tracking (ET)

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