Abstract
We report the development of a new metal-to-metal antifuse with amorphous carbon as the dielectric. Amorphous carbon antifuses have several characteristics making them superior to amorphous silicon antifuses, including lower values of OFF-state leakage current, ON-state resistance, dielectric constant, and breakdown voltage. Most importantly, amorphous carbon antifuses do not show ON-OFF switching, which is observed in amorphous silicon antifuses. A new model is proposed to explain the breakdown mechanism and ON-state reliability of amorphous carbon antifuses.
Original language | English |
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Pages (from-to) | 317-319 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 19 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1998 |
Keywords
- Amorphous carbon
- Antifuse
- FPGA