A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier

Feipeng Wang; Donald F. Kimball; Donald Y. Lie; Peter M. Asbeck; Lawrence E. Larson

doi:10.1109/JSSC.2007.897170

A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier

Feipeng Wang, Donald F. Kimball, Donald Y. Lie, Peter M. Asbeck, Lawrence E. Larson

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

181 Scopus citations

Abstract

A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.1 lg OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

Original language	English
Pages (from-to)	1271-1281
Number of pages	11
Journal	IEEE Journal of Solid-State Circuits
Volume	42
Issue number	6
DOIs	https://doi.org/10.1109/JSSC.2007.897170
State	Published - Jun 2007

Keywords

Envelope tracking
Orthogonal frequency-division multiplexing (OFDM)
Power amplifier (PA)
SiGe
Wireless localarea network (WLAN)

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10.1109/JSSC.2007.897170

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@article{dc75db5880f0449ab55b6432a91e9779,

title = "A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier",

abstract = "A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.1 lg OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.",

keywords = "Envelope tracking, Orthogonal frequency-division multiplexing (OFDM), Power amplifier (PA), SiGe, Wireless localarea network (WLAN)",

author = "Feipeng Wang and Kimball, {Donald F.} and Lie, {Donald Y.} and Asbeck, {Peter M.} and Larson, {Lawrence E.}",

year = "2007",

month = jun,

doi = "10.1109/JSSC.2007.897170",

language = "English",

volume = "42",

pages = "1271--1281",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

number = "6",

}

TY - JOUR

T1 - A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier

AU - Wang, Feipeng

AU - Kimball, Donald F.

AU - Lie, Donald Y.

AU - Asbeck, Peter M.

AU - Larson, Lawrence E.

PY - 2007/6

Y1 - 2007/6

N2 - A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.1 lg OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

AB - A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.1 lg OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

KW - Envelope tracking

KW - Orthogonal frequency-division multiplexing (OFDM)

KW - Power amplifier (PA)

KW - SiGe

KW - Wireless localarea network (WLAN)

UR - http://www.scopus.com/inward/record.url?scp=34249812981&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2007.897170

DO - 10.1109/JSSC.2007.897170

M3 - Article

AN - SCOPUS:34249812981

VL - 42

SP - 1271

EP - 1281

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 6

ER -