A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier

Feipeng Wang, Donald F. Kimball, Donald Y. Lie, Peter M. Asbeck, Lawrence E. Larson

Research output: Contribution to journalArticlepeer-review

181 Scopus citations

Abstract

A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.1 lg OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

Original languageEnglish
Pages (from-to)1271-1281
Number of pages11
JournalIEEE Journal of Solid-State Circuits
Volume42
Issue number6
DOIs
StatePublished - Jun 2007

Keywords

  • Envelope tracking
  • Orthogonal frequency-division multiplexing (OFDM)
  • Power amplifier (PA)
  • SiGe
  • Wireless localarea network (WLAN)

Fingerprint

Dive into the research topics of 'A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier'. Together they form a unique fingerprint.

Cite this