@article{dc75db5880f0449ab55b6432a91e9779,
title = "A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier",
abstract = "A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.1 lg OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.",
keywords = "Envelope tracking, Orthogonal frequency-division multiplexing (OFDM), Power amplifier (PA), SiGe, Wireless localarea network (WLAN)",
author = "Feipeng Wang and Kimball, {Donald F.} and Lie, {Donald Y.} and Asbeck, {Peter M.} and Larson, {Lawrence E.}",
note = "Funding Information: Manuscript received October 5, 2006; revised January 25, 2007. This work was supported in part by the University of California through a Discovery Grant, and by the Conexant Corporation. F. Wang, P. M. Asbeck, and L. E. Larson are with the Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093 USA (e-mail: larson@ece.ucsd.edu). D. F. Kimball is with the California Institute of Telecommunications and Information Technology (Cal-IT ), University of California at San Diego, La Jolla, CA 92093 USA. D. Y. Lie is with the Center for Wireless Communications, University of California at San Diego, La Jolla, CA 92093 USA. Digital Object Identifier 10.1109/JSSC.2007.897170 Funding Information: ACKNOWLEDGMENT The authors also wish to thank Dr. D. Choi and H. Ng of Nokia, D. Ojo and Dr. A. Behzad of Broadcom, Dr. D. Qiao of Axiom Microdevices Inc., C. Hsia, Y. Zhao, M. Li, T. Hung, P. Draxler, Dr. J. Jeung, and M. Pan of the University of California at San Diego for many valuable discussions. The authors would like to acknowledge the support of Dr. A. Barrow of Analog Devices, Inc. The authors would also like to acknowledge the support of, and valuable discussions with, Dr. B. Myers of Conexant and Dr. X. Wang and W. Ni of IBM for help with SiGe BICMOS fabrication.",
year = "2007",
month = jun,
doi = "10.1109/JSSC.2007.897170",
language = "English",
volume = "42",
pages = "1271--1281",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
number = "6",
}