An analytical study of field emission from microstructures is presented that includes positiondependent electric field enhancements, quantum corrections due to electron confinement and fluctuations of the workfunction. Our calculations, applied to a ridge microstructure, predict strong field enhancements. Though quantization lowers current densities as compared to the traditional Fowler–Nordheim process, strong field emission currents can nonetheless be expected for large emitter aspect ratios. Workfunction variations arising from changes in electric field penetration at the surface, or due to interface defects or localized screening, are shown to be important in enhancing the emission currents.
|Pages (from-to)||105038 (8 pages)|
|Journal||Semiconductor Science and Technology|
|State||Published - Sep 21 2015|