A low-voltage 12GHz VCO in 0.13 μm CMOS for OFDM applications

Yiping Han, Lawrence E. Larson, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Abstract

A low voltage 12GHz VCO is fabricated in a 0.13μm CMOS process. The VCO with a 0.8V supply consumes 6mA, The measured phase noise is -84dBc/Hz at 100kHz and -106dBc/Hz at 1MHz offset from the center frequency. Design optimization techniques for high performance VCOs in a low voltage CMOS process are discussed.

Original languageEnglish
Title of host publication2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages379-382
Number of pages4
DOIs
StatePublished - 2006
Event2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States
Duration: Jan 18 2006Jan 20 2006

Publication series

Name2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume2006

Conference

Conference2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
CountryUnited States
CitySan Diego, CA
Period01/18/0601/20/06

Keywords

  • CMOS
  • High frequency
  • Low voltage
  • Phase noise
  • VCO

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    Han, Y., Larson, L. E., & Lie, D. Y. C. (2006). A low-voltage 12GHz VCO in 0.13 μm CMOS for OFDM applications. In 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers (pp. 379-382). [1588002] (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006). https://doi.org/10.1109/SMIC.2005.1588002