@inproceedings{21b515d68f0d406aac489703734adf96,
title = "A highly efficient watt-level SiGe BiCMOS power amplifier with envelope tracking for LTE applications",
abstract = "In this paper, a pseudo-differential power amplifier (PA) is designed using two SiGe power cells fabricated in the 0.35-μm IBM 5PAe SiGe BiCMOS technology with through-wafer-vias (TWVs). In the continuous wave (CW) measurement, the PA achieves a 2-watt level saturated POUT with power-added-efficiency (PAE) above 65% across the bandwidth of 0.7-1 GHz. The envelope tracking (ET) technique is then applied to the PA for enhanced efficiency using the LTE 16QAM signals with a peak-to-average-ratio (PAR) of 7.5 dB. Beside a conventional single buck converter based envelope modulator (SBEM), a dual buck converter based envelope modulator (DBEM) is also designed for higher power drivability. Measurement shows the ET-PA systems can transmit linear POUT of 25/24 dBm with system PAE of 40%/32% at 750 MHz for LTE 16QAM 5/20 MHz signals.",
keywords = "LTE, SiGe power amplifier, envelope modulator, envelope tracking (ET)",
author = "Ruili Wu and Yan Li and Jerry Lopez and Lie, {Donald Y.C.}",
year = "2012",
doi = "10.1109/BCTM.2012.6352618",
language = "English",
isbn = "9781467330206",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
booktitle = "2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012",
note = "null ; Conference date: 30-09-2012 Through 03-10-2012",
}