A highly efficient SiGe differential power amplifier using an envelope-tracking technique for 3GPP LTE applications

Yan Li, Jerry Lopez, Donald Y.C. Lie, Kevin Chen, Stanley Wu, Tzu Yin Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper presents a highly-efficient polar transmitter (TX) system that adopts the envelope-tacking (ET) technique with a differential SiGe power amplifier (PA) for 3GPP Long Term Evolution (LTE) applications. The differential PA was designed using a cascode topology, reaching power-added efficiency (PAE) of 50% at output power of 22dBm in continuous wave (CW) mode. The experimental data also shows that the proposed ET-based polar TX system with the cascode PA delivers 21dBm average output power with 33.6% PAE at 1.42 GHz, while also meeting the LTE 16QAM linearity specs for both error vector magnitude (EVM) and TX emission mask without the need of PA predistortion.

Original languageEnglish
Title of host publication2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Pages121-124
Number of pages4
DOIs
StatePublished - 2010
Event2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010 - Austin, TX, United States
Duration: Oct 4 2010Oct 6 2010

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
CountryUnited States
CityAustin, TX
Period10/4/1010/6/10

Keywords

  • Differential cascode power amplifier (PA)
  • Envelope amplifier
  • Envelope-tracking (ET)
  • Linearity
  • Power-added efficiency (PAE)
  • SiGe PA

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  • Cite this

    Li, Y., Lopez, J., Lie, D. Y. C., Chen, K., Wu, S., & Yang, T. Y. (2010). A highly efficient SiGe differential power amplifier using an envelope-tracking technique for 3GPP LTE applications. In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010 (pp. 121-124). [5667924] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2010.5667924