TY - GEN
T1 - A highly-efficient BiCMOS cascode class-E power amplifier using both envelope-tracking and transistor resizing for LTE-like applications
AU - Li, Yan
AU - Wu, Ruili
AU - Lopez, Jerry
AU - Lie, Donald Y.C.
PY - 2011
Y1 - 2011
N2 - This paper presents the design of a SiGe differential cascode power amplifier (PA) to perform the envelope-tracking (ET) along with transistor resizing for efficiency enhancement for the 16QAM LTE. A new parallel-circuit class-E PA model is developed to analyze and design the cascode PA. The analytic results are compared with SPICE simulation and measurement data to provide circuit design insights. Measurement shows the ET-based PA system reaches an overall power-added-efficiency (PAE) of 38% at its 1 dB compression point (P 1dB) of 22 dBm for its high power mode. Additionally, at the low power mode, some of the transistor cells can be disabled by the integrated MOSFET switches, and the overall PAE is improved by 4-5% at ≥4 dB back-off from its P 1dB. This ET-based cascode PA satisfies the LTE 16QAM linearity specs without needing predistortions.
AB - This paper presents the design of a SiGe differential cascode power amplifier (PA) to perform the envelope-tracking (ET) along with transistor resizing for efficiency enhancement for the 16QAM LTE. A new parallel-circuit class-E PA model is developed to analyze and design the cascode PA. The analytic results are compared with SPICE simulation and measurement data to provide circuit design insights. Measurement shows the ET-based PA system reaches an overall power-added-efficiency (PAE) of 38% at its 1 dB compression point (P 1dB) of 22 dBm for its high power mode. Additionally, at the low power mode, some of the transistor cells can be disabled by the integrated MOSFET switches, and the overall PAE is improved by 4-5% at ≥4 dB back-off from its P 1dB. This ET-based cascode PA satisfies the LTE 16QAM linearity specs without needing predistortions.
KW - LTE
KW - SiGe BiCMOS power amplifier (PA)
KW - envelope-tracking (ET)
KW - parallel-circuit class-E PA model
KW - transistor resizing
UR - http://www.scopus.com/inward/record.url?scp=83455173366&partnerID=8YFLogxK
U2 - 10.1109/BCTM.2011.6082767
DO - 10.1109/BCTM.2011.6082767
M3 - Conference contribution
AN - SCOPUS:83455173366
SN - 9781612841656
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 142
EP - 145
BT - 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2011
T2 - 2011 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011
Y2 - 9 October 2011 through 11 October 2011
ER -