A highly efficient and linear 15 GHz GaN power amplifier design for 5G communications

J. C. Mayeda, D. Y.C. Lie, J. Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

A highly efficient two-stage 15 GHz fully-integrated GaN power amplifier (PA) designed for 5G communication is reported. SPICE simulations show this two-stage PA achieves an output 1 dB compression POUT, 1dB = 32.2 dBm with 28.2 dB gain and 30.0% PAE (power-added efficiency) for CW operation at 15 GHz. Its PAE reaches 38.7% at POUT = 34.0 dBm with a gain of 22.0 dB. Simulations also suggest that dynamic supply modulation from 28 V to 10 V may modestly improve the PA's efficiency at power back-off. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at POUT, 1dB = 32.2 dBm passed the LTE spectrum emission mask (SEM) without any predistortion (Pin = 4dBm), and the wider modulated signal bandwidth from 5 MHz to 20 MHz does not noticeably worsen the PA linearity. State-of-the-art literature survey suggests this highly efficient and linear GaN PA may be quite attractive for 5G PA applications at 15 GHz.

Original languageEnglish
Title of host publicationProceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538617946
DOIs
StatePublished - Oct 17 2017
Event2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 - Waco, United States
Duration: Mar 30 2017Mar 31 2017

Publication series

NameProceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017

Conference

Conference2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
Country/TerritoryUnited States
CityWaco
Period03/30/1703/31/17

Keywords

  • 15 GHz
  • 5G
  • Adjacent Channel Leakage Ratio (ACLR)
  • GaN
  • GaN/SiC HEMT (High Electron Mobility Transistor)
  • Load-Pull
  • Long-term evolution (LTE)
  • Power Amplifier (PA)
  • Radio-Frequency (RF)
  • Supply Modulation

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