TY - GEN
T1 - A highly efficient and linear 15 GHz GaN power amplifier design for 5G communications
AU - Mayeda, J. C.
AU - Lie, D. Y.C.
AU - Lopez, J.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/17
Y1 - 2017/10/17
N2 - A highly efficient two-stage 15 GHz fully-integrated GaN power amplifier (PA) designed for 5G communication is reported. SPICE simulations show this two-stage PA achieves an output 1 dB compression POUT, 1dB = 32.2 dBm with 28.2 dB gain and 30.0% PAE (power-added efficiency) for CW operation at 15 GHz. Its PAE reaches 38.7% at POUT = 34.0 dBm with a gain of 22.0 dB. Simulations also suggest that dynamic supply modulation from 28 V to 10 V may modestly improve the PA's efficiency at power back-off. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at POUT, 1dB = 32.2 dBm passed the LTE spectrum emission mask (SEM) without any predistortion (Pin = 4dBm), and the wider modulated signal bandwidth from 5 MHz to 20 MHz does not noticeably worsen the PA linearity. State-of-the-art literature survey suggests this highly efficient and linear GaN PA may be quite attractive for 5G PA applications at 15 GHz.
AB - A highly efficient two-stage 15 GHz fully-integrated GaN power amplifier (PA) designed for 5G communication is reported. SPICE simulations show this two-stage PA achieves an output 1 dB compression POUT, 1dB = 32.2 dBm with 28.2 dB gain and 30.0% PAE (power-added efficiency) for CW operation at 15 GHz. Its PAE reaches 38.7% at POUT = 34.0 dBm with a gain of 22.0 dB. Simulations also suggest that dynamic supply modulation from 28 V to 10 V may modestly improve the PA's efficiency at power back-off. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at POUT, 1dB = 32.2 dBm passed the LTE spectrum emission mask (SEM) without any predistortion (Pin = 4dBm), and the wider modulated signal bandwidth from 5 MHz to 20 MHz does not noticeably worsen the PA linearity. State-of-the-art literature survey suggests this highly efficient and linear GaN PA may be quite attractive for 5G PA applications at 15 GHz.
KW - 15 GHz
KW - 5G
KW - Adjacent Channel Leakage Ratio (ACLR)
KW - GaN
KW - GaN/SiC HEMT (High Electron Mobility Transistor)
KW - Load-Pull
KW - Long-term evolution (LTE)
KW - Power Amplifier (PA)
KW - Radio-Frequency (RF)
KW - Supply Modulation
UR - http://www.scopus.com/inward/record.url?scp=85034024090&partnerID=8YFLogxK
U2 - 10.1109/WMCaS.2017.8070699
DO - 10.1109/WMCaS.2017.8070699
M3 - Conference contribution
AN - SCOPUS:85034024090
T3 - Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
BT - Proceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
Y2 - 30 March 2017 through 31 March 2017
ER -