A Highly Efficient 18 -40 GHz Linear Power Amplifier in 40 nm GaN for mm-Wave 5G

Jill C. Mayeda, Donald Y.C. Lie, Jerry Lopez

Research output: Contribution to journalArticlepeer-review

Abstract

A medium-power, highly-efficient broadband linear power amplifier (PA) is designed in a 40 nm GaN technology that covers the key 5G FR2 band of 24 – 40 GHz. Load-pull simulations suggest better device broadband performance and peak PAE (power-added-efficiency) around VDD = 4 – 6 V. Measurement data corroborates the simulations and this PA achieves a small-signal 3-dB bandwidth of 18.0 – 40.3 GHz, with max. PAE/ PSAT of 42.1%/ 18.6 dBm at 28 GHz, and 26.0% /17.2 dBm at 38 GHz at VDD = 4V. When tested with a 9x100 MHz 256-QAM 5G NR signal, it achieves an adjacent-channel-leakage-ratio (ACLR) of -27 dBc with POUT,AVG./ PAE of 11.3 dBm/ 13.9% at 28 GHz. When compared with state-of-the-art broadband PAs, it achieves the best S21 3-dB bandwidth with excellent peak PAE and linearity. This work also reports the best PAE for broadband medium-power millimeter-wave GaN PA at PSAT 20 dBm.

Original languageEnglish
JournalIEEE Microwave and Wireless Components Letters
DOIs
StateAccepted/In press - 2021

Keywords

  • 5G
  • 5G NR
  • 5G mobile communication
  • Broadband amplifiers
  • FR2
  • Frequency measurement
  • GaN
  • Gain
  • Linearity
  • Load modeling
  • PAE
  • Radio frequency
  • broadband
  • linearity
  • millimeter-wave
  • mm-Wave
  • power amplifier

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