@inproceedings{0f871f98509e40fca111167c574d2a8d,
title = "A highly efficient 1-Watt broadband class-J SiGe power amplifier at 700MHz",
abstract = "In this paper, the design and measurement results of a highly efficient 1-Watt broadband class J SiGe power amplifier (PA) at 700 MHz are reported. Comparisons between a class J PA and a traditional class AB/B PA have been made, first through theoretical analysis in terms of load network, efficiency and bandwidth behavior, and secondly by bench measurement data. A single-ended power cell is designed and fabricated in the 0.35 μm IBM 5PAe SiGe BiCMOS technology with through-wafer-vias (TWVs). Watt-level output power with greater than 50% efficiency is achieved on bench across a wide bandwidth of 500 MHz to 900 MHz for the class J PA (i.e., >57% bandwidth at the center frequency of 700 MHz). P sat of 30.9 dBm with 62% collector efficiency (CE) at 700 MHz is measured while the highest efficiency of 68.9% occurs at 650 MHz using a 4.2 V supply. Load network of this class J PA is realized with lumped passive components on a FR4 printed circuit board (PCB). A narrow-band class AB PA counterpart is also designed and fabricated for comparison. The data suggests that the broadband class J SiGe PA can be promising for future multi-band wireless applications.",
keywords = "Class AB/B, Class J, SiGe power amplifiers (PA), Watt level, broadband PA",
author = "Ruili Wu and Jerry Lopez and Yan Li and Lie, {Donald Y.C.}",
year = "2012",
doi = "10.1109/SiRF.2012.6160139",
language = "English",
isbn = "9781457713163",
series = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers",
pages = "69--72",
booktitle = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers",
note = "2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 ; Conference date: 16-01-2012 Through 18-01-2012",
}