A high efficiency SiGe BiCMOS envelope-tracking power amplifier for W-CDMA applications

Yen Ting Liu, Ruili Wu, Jerry Lopez, Yan Li, Jerry Tsay, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a highly efficient power amplifier (PA) using the envelope tracking (ET) technique for 3G W-CDMA applications. The PA is designed in the IBM 0.35-μm SiGe BiCMOS process with through-silicon-via (TSV). The CMOS envelope modulator IC is designed and fabricated in the TSMC 0.35-μm SiGe BiCMOS process. The ET-PA system achieves an overall composite power-added-efficiency (PAE) of 35.4% at POUT of 26.5 dBm at 900 MHz with the W-CDMA signal and improves the PAE by 5% compared to that of the fixed-supply standalone SiGe PA.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2013
DOIs
StatePublished - 2013
Event2013 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2013 - Waco, TX, United States
Duration: Apr 4 2013Apr 5 2013

Publication series

NameProceedings of the 2013 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2013

Conference

Conference2013 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2013
CountryUnited States
CityWaco, TX
Period04/4/1304/5/13

Keywords

  • Envelope modulator (EM)
  • W-CDMA
  • envelope tracking (ET)
  • power amplifier (PA)
  • through-silicon-via (TSV)

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