TY - GEN
T1 - A high efficiency fully-monolithic 2-stage C-band GaN power amplifier for 5G microcell applications
AU - Mayeda, J. C.
AU - Lie, D. Y.C.
AU - Lopez, J.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/6/29
Y1 - 2018/6/29
N2 - A highly efficient two-stage 6 GHz fully-integrated GaN power amplifier (PA) designed for 5G microcell communication is reported in this work. Post-layout SPICE simulations show this two-stage PA achieves an output 1 dB compression Pout, idb above 33 dBm and greater than 31 dB gain and 34% PAE (power-added efficiency) for CW operation at 6 GHz. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at 4 dB below Pout, 1db passed the LTE spectrum emission mask (SEM) without any predistortion. Operated at a 28 V supply, this fully monolithic PA achieves reasonable frequency performance and linearity while it did not adopt the Doherty architecture for backoff efficiency enhancement; however, simulations suggest it may deliver good PAE values at power backoff when supply modulation is used to make it competitive for 5G PA microcell applications.
AB - A highly efficient two-stage 6 GHz fully-integrated GaN power amplifier (PA) designed for 5G microcell communication is reported in this work. Post-layout SPICE simulations show this two-stage PA achieves an output 1 dB compression Pout, idb above 33 dBm and greater than 31 dB gain and 34% PAE (power-added efficiency) for CW operation at 6 GHz. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at 4 dB below Pout, 1db passed the LTE spectrum emission mask (SEM) without any predistortion. Operated at a 28 V supply, this fully monolithic PA achieves reasonable frequency performance and linearity while it did not adopt the Doherty architecture for backoff efficiency enhancement; however, simulations suggest it may deliver good PAE values at power backoff when supply modulation is used to make it competitive for 5G PA microcell applications.
KW - 5G
KW - Adjacent channel leakage ratio (ACLR)
KW - GaN
KW - GaN/SiC HEMT (High Electron Mobility Transistor)
KW - Load-pull
KW - Long-term evolution (LTE)
KW - Microcell
KW - Power Amplifier (PA)
KW - Small cell
KW - Supply modulation
UR - http://www.scopus.com/inward/record.url?scp=85051044144&partnerID=8YFLogxK
U2 - 10.1109/WMCaS.2018.8400623
DO - 10.1109/WMCaS.2018.8400623
M3 - Conference contribution
AN - SCOPUS:85051044144
T3 - Proceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018
SP - 1
EP - 4
BT - Proceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018
Y2 - 5 April 2018 through 6 April 2018
ER -