@inproceedings{50197384946f4303af374daed91f264f,
title = "A high efficiency fully-monolithic 2-stage C-band GaN power amplifier for 5G microcell applications",
abstract = "A highly efficient two-stage 6 GHz fully-integrated GaN power amplifier (PA) designed for 5G microcell communication is reported in this work. Post-layout SPICE simulations show this two-stage PA achieves an output 1 dB compression Pout, idb above 33 dBm and greater than 31 dB gain and 34% PAE (power-added efficiency) for CW operation at 6 GHz. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at 4 dB below Pout, 1db passed the LTE spectrum emission mask (SEM) without any predistortion. Operated at a 28 V supply, this fully monolithic PA achieves reasonable frequency performance and linearity while it did not adopt the Doherty architecture for backoff efficiency enhancement; however, simulations suggest it may deliver good PAE values at power backoff when supply modulation is used to make it competitive for 5G PA microcell applications.",
keywords = "5G, Adjacent channel leakage ratio (ACLR), GaN, GaN/SiC HEMT (High Electron Mobility Transistor), Load-pull, Long-term evolution (LTE), Microcell, Power Amplifier (PA), Small cell, Supply modulation",
author = "Mayeda, {J. C.} and Lie, {D. Y.C.} and J. Lopez",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; null ; Conference date: 05-04-2018 Through 06-04-2018",
year = "2018",
month = jun,
day = "29",
doi = "10.1109/WMCaS.2018.8400623",
language = "English",
series = "Proceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
booktitle = "Proceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018",
}