A high efficiency fully-monolithic 2-stage C-band GaN power amplifier for 5G microcell applications

J. C. Mayeda, D. Y.C. Lie, J. Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A highly efficient two-stage 6 GHz fully-integrated GaN power amplifier (PA) designed for 5G microcell communication is reported in this work. Post-layout SPICE simulations show this two-stage PA achieves an output 1 dB compression Pout, idb above 33 dBm and greater than 31 dB gain and 34% PAE (power-added efficiency) for CW operation at 6 GHz. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at 4 dB below Pout, 1db passed the LTE spectrum emission mask (SEM) without any predistortion. Operated at a 28 V supply, this fully monolithic PA achieves reasonable frequency performance and linearity while it did not adopt the Doherty architecture for backoff efficiency enhancement; however, simulations suggest it may deliver good PAE values at power backoff when supply modulation is used to make it competitive for 5G PA microcell applications.

Original languageEnglish
Title of host publicationProceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538649183
DOIs
StatePublished - Jun 29 2018
Event2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018 - Waco, United States
Duration: Apr 5 2018Apr 6 2018

Publication series

NameProceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018

Conference

Conference2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018
CountryUnited States
CityWaco
Period04/5/1804/6/18

Keywords

  • 5G
  • Adjacent channel leakage ratio (ACLR)
  • GaN
  • GaN/SiC HEMT (High Electron Mobility Transistor)
  • Load-pull
  • Long-term evolution (LTE)
  • Microcell
  • Power Amplifier (PA)
  • Small cell
  • Supply modulation

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  • Cite this

    Mayeda, J. C., Lie, D. Y. C., & Lopez, J. (2018). A high efficiency fully-monolithic 2-stage C-band GaN power amplifier for 5G microcell applications. In Proceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018 (pp. 1-4). [8400623] (Proceedings of the 2018 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMCaS.2018.8400623