A fully monolithic BiCMOS envelope-tracking power amplifier with on-chip transformer for broadband wireless applications

Yan Li; Jerry Lopez; Ruili Wu; Donald Y.C. Lie

doi:10.1109/LMWC.2012.2197820

A fully monolithic BiCMOS envelope-tracking power amplifier with on-chip transformer for broadband wireless applications

Yan Li, Jerry Lopez, Ruili Wu, Donald Y.C. Lie

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

This letter presents a power-combined BiCMOS power amplifier (PA) system using envelope-tracking (ET) to serve as a fully monolithic solution for high peak-to-average ratio (PAR) broadband signals. The system consists of two cascode unit PAs combined by an on-chip transformer and modulated by a single envelope modulator. Without needing predistortion, the maximum linear output power of 24.6 dBm/23.8 dBm/23.2 dBm can be achieved with overall power-added-efficiency (PAE) of 26%/24%/22.5% for the LTE 16QAM 5 MHz/LTE 16QAM 10 MHz/WiMAX 64QAM 5 MHz signals at 1.9 GHz. The proposed power-combined ET-PA is fabricated in the TSMC 0.35 μm SiGe BiCMOS technology.

Original language	English
Article number	6202374
Pages (from-to)	288-290
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1109/LMWC.2012.2197820
State	Published - 2012

Keywords

Envelope-tracking (ET)
envelope modulator
on-chip transformer
power-combined power amplifier (PA)

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10.1109/LMWC.2012.2197820

Cite this

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title = "A fully monolithic BiCMOS envelope-tracking power amplifier with on-chip transformer for broadband wireless applications",

abstract = "This letter presents a power-combined BiCMOS power amplifier (PA) system using envelope-tracking (ET) to serve as a fully monolithic solution for high peak-to-average ratio (PAR) broadband signals. The system consists of two cascode unit PAs combined by an on-chip transformer and modulated by a single envelope modulator. Without needing predistortion, the maximum linear output power of 24.6 dBm/23.8 dBm/23.2 dBm can be achieved with overall power-added-efficiency (PAE) of 26%/24%/22.5% for the LTE 16QAM 5 MHz/LTE 16QAM 10 MHz/WiMAX 64QAM 5 MHz signals at 1.9 GHz. The proposed power-combined ET-PA is fabricated in the TSMC 0.35 μm SiGe BiCMOS technology.",

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AB - This letter presents a power-combined BiCMOS power amplifier (PA) system using envelope-tracking (ET) to serve as a fully monolithic solution for high peak-to-average ratio (PAR) broadband signals. The system consists of two cascode unit PAs combined by an on-chip transformer and modulated by a single envelope modulator. Without needing predistortion, the maximum linear output power of 24.6 dBm/23.8 dBm/23.2 dBm can be achieved with overall power-added-efficiency (PAE) of 26%/24%/22.5% for the LTE 16QAM 5 MHz/LTE 16QAM 10 MHz/WiMAX 64QAM 5 MHz signals at 1.9 GHz. The proposed power-combined ET-PA is fabricated in the TSMC 0.35 μm SiGe BiCMOS technology.

KW - Envelope-tracking (ET)

KW - envelope modulator

KW - on-chip transformer

KW - power-combined power amplifier (PA)

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JF - IEEE Microwave and Wireless Components Letters

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ER -

A fully monolithic BiCMOS envelope-tracking power amplifier with on-chip transformer for broadband wireless applications

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Keywords

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