@inproceedings{87e79d6bb4cc45739d64ab591f0de85d,
title = "A fully-integrated highly-efficient RF class e SiGe power amplifier with an envelope-tracking technique for EDGE applications",
abstract = "This paper reports on the results of a highly efficient monolithically fully-integrated SiGe Class E power amplifier using envelope tracking techniques for EDGE applications. The Envelope-tracking (ET) system includes a discrete linear op-amp and a switching power converter. The RF Class E amplifier was fabricated in a 0.18μm BiCMOS SiGe technology. The RF Class E power amplifier achieved a collertor efficiency (CE) of 62.7% and the overall power added sfficiency (PAE) of the ET system is 44.4% at an output power of 28.4dBm for an 881MHz EDGE modulated signal. A discrete envelope Switching amplifier achieved 82.8% efficiency while driving the Class E PA voltagt supply. The linearized SiGe PA passed file stringent EDGE transmit spectrum mask",
keywords = "Heterojunction bipolar transistors, Power amplifier, Switching amplifiers",
author = "Jeremy Popp and Lie, {Donald Y.C.} and Feipeng Wang and Donald Kimball and Lawrence Larson",
year = "2006",
language = "English",
isbn = "0780394127",
series = "Proceedings - 2006 IEEE Radio and Wireless Symposium",
pages = "231--234",
booktitle = "Proceedings - 2006 IEEE Radio and Wireless Symposium",
note = "2006 IEEE Radio and Wireless Symposium ; Conference date: 17-01-2006 Through 19-01-2006",
}