A fully-integrated highly-efficient RF class e SiGe power amplifier with an envelope-tracking technique for EDGE applications

Jeremy Popp, Donald Y.C. Lie, Feipeng Wang, Donald Kimball, Lawrence Larson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Abstract

This paper reports on the results of a highly efficient monolithically fully-integrated SiGe Class E power amplifier using envelope tracking techniques for EDGE applications. The Envelope-tracking (ET) system includes a discrete linear op-amp and a switching power converter. The RF Class E amplifier was fabricated in a 0.18μm BiCMOS SiGe technology. The RF Class E power amplifier achieved a collertor efficiency (CE) of 62.7% and the overall power added sfficiency (PAE) of the ET system is 44.4% at an output power of 28.4dBm for an 881MHz EDGE modulated signal. A discrete envelope Switching amplifier achieved 82.8% efficiency while driving the Class E PA voltagt supply. The linearized SiGe PA passed file stringent EDGE transmit spectrum mask

Original languageEnglish
Title of host publicationProceedings - 2006 IEEE Radio and Wireless Symposium
Pages231-234
Number of pages4
StatePublished - 2006
Event2006 IEEE Radio and Wireless Symposium - San Diego, CA, United States
Duration: Jan 17 2006Jan 19 2006

Publication series

NameProceedings - 2006 IEEE Radio and Wireless Symposium
Volume2006

Conference

Conference2006 IEEE Radio and Wireless Symposium
CountryUnited States
CitySan Diego, CA
Period01/17/0601/19/06

Keywords

  • Heterojunction bipolar transistors
  • Power amplifier
  • Switching amplifiers

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    Popp, J., Lie, D. Y. C., Wang, F., Kimball, D., & Larson, L. (2006). A fully-integrated highly-efficient RF class e SiGe power amplifier with an envelope-tracking technique for EDGE applications. In Proceedings - 2006 IEEE Radio and Wireless Symposium (pp. 231-234). [1615137] (Proceedings - 2006 IEEE Radio and Wireless Symposium; Vol. 2006).