A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications

Jerry Tsay; Matthew Sapp; Michael Phamvu; Travis Hall; Ryan Geries; Yan Li; Jerry Lopez; Donald Y.C. Lie

doi:10.1109/BCTM.2014.6981302

A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications

Jerry Tsay, Matthew Sapp, Michael Phamvu, Travis Hall, Ryan Geries, Yan Li, Jerry Lopez, Donald Y.C. Lie

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at P_out = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at P_out = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.

Original language	English
Title of host publication	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-150
Number of pages	4
ISBN (Electronic)	9781479972302
DOIs	https://doi.org/10.1109/BCTM.2014.6981302
State	Published - Dec 9 2014
Event	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States Duration: Sep 28 2014 → Oct 1 2014

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Conference

Conference	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Country/Territory	United States
City	Coronado
Period	09/28/14 → 10/1/14

Keywords

ET-PA
LTE
SiGe power amplifier (PA)
envelope modulator (EM)
envelope tracking (ET)

Access to Document

10.1109/BCTM.2014.6981302

Cite this

Tsay, J., Sapp, M., Phamvu, M., Hall, T., Geries, R., Li, Y., Lopez, J., & Lie, D. Y. C. (2014). A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 147-150). [6981302] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981302

Tsay, Jerry ; Sapp, Matthew ; Phamvu, Michael et al. / A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications. 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 147-150 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

@inproceedings{0dc4f11432064262b30d7fb572b0659d,

title = "A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications",

abstract = "In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at Pout = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.",

keywords = "ET-PA, LTE, SiGe power amplifier (PA), envelope modulator (EM), envelope tracking (ET)",

author = "Jerry Tsay and Matthew Sapp and Michael Phamvu and Travis Hall and Ryan Geries and Yan Li and Jerry Lopez and Lie, {Donald Y.C.}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; null ; Conference date: 28-09-2014 Through 01-10-2014",

year = "2014",

month = dec,

day = "9",

doi = "10.1109/BCTM.2014.6981302",

language = "English",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "147--150",

booktitle = "2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014",

}

Tsay, J, Sapp, M, Phamvu, M, Hall, T, Geries, R, Li, Y, Lopez, J & Lie, DYC 2014, A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications. in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014., 6981302, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Institute of Electrical and Electronics Engineers Inc., pp. 147-150, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014, Coronado, United States, 09/28/14. https://doi.org/10.1109/BCTM.2014.6981302

A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications. / Tsay, Jerry; Sapp, Matthew; Phamvu, Michael et al.

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 147-150 6981302 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications

AU - Tsay, Jerry

AU - Sapp, Matthew

AU - Phamvu, Michael

AU - Hall, Travis

AU - Geries, Ryan

AU - Li, Yan

AU - Lopez, Jerry

AU - Lie, Donald Y.C.

PY - 2014/12/9

Y1 - 2014/12/9

N2 - In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at Pout = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.

AB - In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at Pout = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.

KW - ET-PA

KW - LTE

KW - SiGe power amplifier (PA)

KW - envelope modulator (EM)

KW - envelope tracking (ET)

UR - http://www.scopus.com/inward/record.url?scp=84919683838&partnerID=8YFLogxK

U2 - 10.1109/BCTM.2014.6981302

DO - 10.1109/BCTM.2014.6981302

M3 - Conference contribution

AN - SCOPUS:84919683838

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 147

EP - 150

BT - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 28 September 2014 through 1 October 2014

ER -

Tsay J, Sapp M, Phamvu M, Hall T, Geries R, Li Y et al. A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 147-150. 6981302. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BCTM.2014.6981302

A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this