TY - GEN
T1 - A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications
AU - Tsay, Jerry
AU - Sapp, Matthew
AU - Phamvu, Michael
AU - Hall, Travis
AU - Geries, Ryan
AU - Li, Yan
AU - Lopez, Jerry
AU - Lie, Donald Y.C.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/12/9
Y1 - 2014/12/9
N2 - In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at Pout = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.
AB - In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at Pout = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.
KW - ET-PA
KW - LTE
KW - SiGe power amplifier (PA)
KW - envelope modulator (EM)
KW - envelope tracking (ET)
UR - http://www.scopus.com/inward/record.url?scp=84919683838&partnerID=8YFLogxK
U2 - 10.1109/BCTM.2014.6981302
DO - 10.1109/BCTM.2014.6981302
M3 - Conference contribution
AN - SCOPUS:84919683838
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 147
EP - 150
BT - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 28 September 2014 through 1 October 2014
ER -