A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches

J. Shaver, D. Mauch, R. Joshi, J. Mankowski, J. Dickens, A. Neuber

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

4H-SiC Photoconductive Semiconductor Switches (PCSSs) have shown significant promise for use in pulsed power related switch applications. This simulation uses the finite difference method, parallelized using a NVIDIA graphical processing unit and the CUDA framework, to solve the system of partial differential equations that model the semiconductor physics involved in the high voltage blocking state of the photoconductive switch. By taking into consideration material properties (mid-band gap trap energy level and concentration, etc.), we are able to gain an understanding of how changes in these parameters affect the space-charge-limited (SCL) currents observed in the high voltage blocking state. This subsequently allows for a fundamental understanding of the parameters controlling the high voltage switching capability of photoconductive switches. Results of the simulation are presented.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
CountryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • Analytical models
  • Electric fields
  • Electron traps
  • Graphics processing units
  • Mathematical model
  • Optical switches

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