A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches

J. Shaver; D. Mauch; R. Joshi; J. Mankowski; J. Dickens; A. Neuber

doi:10.1109/PPC.2015.7296867

A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches

J. Shaver, D. Mauch, R. Joshi, J. Mankowski, J. Dickens, A. Neuber

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

4H-SiC Photoconductive Semiconductor Switches (PCSSs) have shown significant promise for use in pulsed power related switch applications. This simulation uses the finite difference method, parallelized using a NVIDIA graphical processing unit and the CUDA framework, to solve the system of partial differential equations that model the semiconductor physics involved in the high voltage blocking state of the photoconductive switch. By taking into consideration material properties (mid-band gap trap energy level and concentration, etc.), we are able to gain an understanding of how changes in these parameters affect the space-charge-limited (SCL) currents observed in the high voltage blocking state. This subsequently allows for a fundamental understanding of the parameters controlling the high voltage switching capability of photoconductive switches. Results of the simulation are presented.

Original language	English
Title of host publication	2015 IEEE Pulsed Power Conference, PPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479984039
DOIs	https://doi.org/10.1109/PPC.2015.7296867
State	Published - Oct 12 2015
Event	IEEE Pulsed Power Conference, PPC 2015 - Austin, United States Duration: May 31 2015 → Jun 4 2015

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference
Volume	2015-October

Conference

Conference	IEEE Pulsed Power Conference, PPC 2015
Country	United States
City	Austin
Period	05/31/15 → 06/4/15

Keywords

Analytical models
Electric fields
Electron traps
Graphics processing units
Mathematical model
Optical switches

Access to Document

10.1109/PPC.2015.7296867

Link to publication in Scopus

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Shaver, J., Mauch, D., Joshi, R., Mankowski, J., Dickens, J., & Neuber, A. (2015). A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches. In 2015 IEEE Pulsed Power Conference, PPC 2015 [7296867] (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPC.2015.7296867

Shaver, J. ; Mauch, D. ; Joshi, R. ; Mankowski, J. ; Dickens, J. ; Neuber, A. / A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches. 2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (Digest of Technical Papers-IEEE International Pulsed Power Conference).

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title = "A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches",

abstract = "4H-SiC Photoconductive Semiconductor Switches (PCSSs) have shown significant promise for use in pulsed power related switch applications. This simulation uses the finite difference method, parallelized using a NVIDIA graphical processing unit and the CUDA framework, to solve the system of partial differential equations that model the semiconductor physics involved in the high voltage blocking state of the photoconductive switch. By taking into consideration material properties (mid-band gap trap energy level and concentration, etc.), we are able to gain an understanding of how changes in these parameters affect the space-charge-limited (SCL) currents observed in the high voltage blocking state. This subsequently allows for a fundamental understanding of the parameters controlling the high voltage switching capability of photoconductive switches. Results of the simulation are presented.",

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Shaver, J, Mauch, D, Joshi, R , Mankowski, J , Dickens, J & Neuber, A 2015, A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches. in 2015 IEEE Pulsed Power Conference, PPC 2015., 7296867, Digest of Technical Papers-IEEE International Pulsed Power Conference, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., IEEE Pulsed Power Conference, PPC 2015, Austin, United States, 05/31/15. https://doi.org/10.1109/PPC.2015.7296867

A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches. / Shaver, J.; Mauch, D.; Joshi, R.; Mankowski, J.; Dickens, J.; Neuber, A.

2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7296867 (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Joshi, R.

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AU - Dickens, J.

AU - Neuber, A.

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N2 - 4H-SiC Photoconductive Semiconductor Switches (PCSSs) have shown significant promise for use in pulsed power related switch applications. This simulation uses the finite difference method, parallelized using a NVIDIA graphical processing unit and the CUDA framework, to solve the system of partial differential equations that model the semiconductor physics involved in the high voltage blocking state of the photoconductive switch. By taking into consideration material properties (mid-band gap trap energy level and concentration, etc.), we are able to gain an understanding of how changes in these parameters affect the space-charge-limited (SCL) currents observed in the high voltage blocking state. This subsequently allows for a fundamental understanding of the parameters controlling the high voltage switching capability of photoconductive switches. Results of the simulation are presented.

AB - 4H-SiC Photoconductive Semiconductor Switches (PCSSs) have shown significant promise for use in pulsed power related switch applications. This simulation uses the finite difference method, parallelized using a NVIDIA graphical processing unit and the CUDA framework, to solve the system of partial differential equations that model the semiconductor physics involved in the high voltage blocking state of the photoconductive switch. By taking into consideration material properties (mid-band gap trap energy level and concentration, etc.), we are able to gain an understanding of how changes in these parameters affect the space-charge-limited (SCL) currents observed in the high voltage blocking state. This subsequently allows for a fundamental understanding of the parameters controlling the high voltage switching capability of photoconductive switches. Results of the simulation are presented.

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Shaver J, Mauch D, Joshi R , Mankowski J , Dickens J , Neuber A. A 2D finite difference simulation to investigate the high voltage blocking characteristics of 4H-SiC photoconductive semiconductor switches. In 2015 IEEE Pulsed Power Conference, PPC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7296867. (Digest of Technical Papers-IEEE International Pulsed Power Conference). https://doi.org/10.1109/PPC.2015.7296867