A 19.1-46.5 GHz Broadband Efficient Power Amplifier in 22nm CMOS FD-SOI for mm-Wave 5G

Jill Mayeda, Clint Sweeney, Donald Y.C. Lie, Jerry Lopez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

In this paper, we discuss the design and measurement results of a very broadband and efficient millimeter-wave (mm-Wave) medium-power power amplifier (PA) for potential mm-Wave 5G applications. This PA is designed in an advanced mm-Wave 22 nm CMOS FD-SOI technology and targets to cover most of the key 5GFR2 band (e.g., from 24.25 to 43.5 GHz). This PA achieves an outstanding 3-dB bandwidth (BW) of 19. 1-46.5 GHz, while maintaining >12.5% max. PAE (power-added-efficiency) across the entire 27.4 GHz BW with a max. PAE of 26.1% at 24 GHz. The linearity of this PA is also tested with 50/100/400/9x100 MHz 256-QAM 5G NR signals (PAPR or peak-to-average-power-ratio = 8 dB), which demonstrates useful insights on CMOS PA linearity degradation with increasing BW. We will also compare our PAs' performance vs. other state-of-the-art silicon broadband mm-Wave PAs in the literature.

Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems, ISCAS 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1112-1116
Number of pages5
ISBN (Electronic)9781665484855
DOIs
StatePublished - 2022
Event2022 IEEE International Symposium on Circuits and Systems, ISCAS 2022 - Austin, United States
Duration: May 27 2022Jun 1 2022

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2022-May
ISSN (Print)0271-4310

Conference

Conference2022 IEEE International Symposium on Circuits and Systems, ISCAS 2022
Country/TerritoryUnited States
CityAustin
Period05/27/2206/1/22

Keywords

  • 5G
  • CMOS-SOI
  • Digital
  • Phased-array
  • Power Amplifier (PA)
  • millimeter-wave

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