TY - JOUR
T1 - A 0.7 v relative temperature sensor with a non-calibrated ±1 °c 3σ relative inaccuracy
AU - Lu, Li
AU - Vosooghi, Bozorgmehr
AU - Dai, Liang
AU - Li, Changzhi
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - This paper presents a new low-voltage relative temperature sensor for multi-core digital processor on-chip thermal management in a 180 nm CMOS process. Three types of sensing diodes including Schottky barrier diode (SBD), subthreshold MOSFET diode and dynamic threshold MOSFET (DTMOS) diode have been investigated for low-voltage operation, while traditional parasitic PNP-bipolar junction transistor (BJT) diodes are implemented to provide a performance reference. A matrix of 7 × 7 small remote sensor nodes is implemented on the chip with a deployment density of 49/0.81 mm2 and sharing the same bias current generator, control logic, and data converter. The measured minimum supply voltage (not including the clock control block) of the sensor is 0.7 V over-55° to 125 °C. The relative sensing inaccuracies (3σ) without calibration are less than 1.5 °C, 1.2 °C and 1 °C for the designs based on SBD, subthreshold MOSFET, and DTMOS, respectively. To the best of the authors' knowledge, this is the first time that non-calibrated relative sensing accuracy is reported for SBD-based and DTMOS-based temperature sensors, and the best reported result for the design based on subthreshold MOSFET. The absolute inaccuracies with calibration-per-chip are also presented. Furthermore, the multi-location thermal monitoring function has been experimentally demonstrated and a 1.8 on-chip temperature gradient was detected.
AB - This paper presents a new low-voltage relative temperature sensor for multi-core digital processor on-chip thermal management in a 180 nm CMOS process. Three types of sensing diodes including Schottky barrier diode (SBD), subthreshold MOSFET diode and dynamic threshold MOSFET (DTMOS) diode have been investigated for low-voltage operation, while traditional parasitic PNP-bipolar junction transistor (BJT) diodes are implemented to provide a performance reference. A matrix of 7 × 7 small remote sensor nodes is implemented on the chip with a deployment density of 49/0.81 mm2 and sharing the same bias current generator, control logic, and data converter. The measured minimum supply voltage (not including the clock control block) of the sensor is 0.7 V over-55° to 125 °C. The relative sensing inaccuracies (3σ) without calibration are less than 1.5 °C, 1.2 °C and 1 °C for the designs based on SBD, subthreshold MOSFET, and DTMOS, respectively. To the best of the authors' knowledge, this is the first time that non-calibrated relative sensing accuracy is reported for SBD-based and DTMOS-based temperature sensors, and the best reported result for the design based on subthreshold MOSFET. The absolute inaccuracies with calibration-per-chip are also presented. Furthermore, the multi-location thermal monitoring function has been experimentally demonstrated and a 1.8 on-chip temperature gradient was detected.
KW - Dynamic threshold MOSFET
KW - Low-voltage
KW - Multilocation thermal monitoring
KW - Relative accuracy
KW - Schottky barrier diode
KW - Subthreshold MOSFET
KW - Temperature sensor
UR - http://www.scopus.com/inward/record.url?scp=84948581369&partnerID=8YFLogxK
U2 - 10.1109/TCSI.2015.2471555
DO - 10.1109/TCSI.2015.2471555
M3 - Article
AN - SCOPUS:84948581369
SN - 1549-8328
VL - 62
SP - 2434
EP - 2444
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 10
M1 - 07272773
ER -