TY - JOUR
T1 - 550-W Ultraviolet exciplex source for pulsed power applications
AU - Feathers, S.
AU - Stephens, J.
AU - Neuber, A.
N1 - Funding Information:
Manuscript received April 11, 2017; revised July 14, 2018; accepted August 28, 2018. Date of publication October 30, 2018; date of current version January 8, 2019. This work was supported by AFOSR through the Collaborative Research on Novel High Power Sources for and Physics of Ionospheric Modification under Grant FA9550-14-1-0019. The review of this paper was arranged by Senior Editor W. Jiang. (Corresponding author: S. Feathers.) S. Feathers and A. Neuber are with the Center for Pulsed Power and Power Electronics, Texas Tech University, Lubbock, TX 79409 USA (e-mail: shannon.feathers@ttu.edu).
Publisher Copyright:
© 2018 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - The investigation of a high output power, arc lamp exciplex ultraviolet (UV) source for pulsed power applications is presented. The arc lamp generates up to 550 W from XeF∗ exciplex radiation at 351 nm, totaling to nearly 0.15-mJ total radiated UV energy over the duration of the UV pulse. With an ellipsoidal reflector, the arc lamp produces 400 W/cm2 and up to 0.1 mJ of UV light onto a 1-cm2 area. A complete experimental investigation of the arc lamp for both XeCl∗ (308 nm) and XeF∗ (351 nm) exciplex sources operated under varying excitation and pressure conditions is reported. As an application, the arc lamp is successfully utilized as an illumination source for an intrinsically triggered, wide bandgap SiC photoconductive semiconductor switch (PCSS), where a PCSS ON-state resistance of $500~\Omega $ is achieved.
AB - The investigation of a high output power, arc lamp exciplex ultraviolet (UV) source for pulsed power applications is presented. The arc lamp generates up to 550 W from XeF∗ exciplex radiation at 351 nm, totaling to nearly 0.15-mJ total radiated UV energy over the duration of the UV pulse. With an ellipsoidal reflector, the arc lamp produces 400 W/cm2 and up to 0.1 mJ of UV light onto a 1-cm2 area. A complete experimental investigation of the arc lamp for both XeCl∗ (308 nm) and XeF∗ (351 nm) exciplex sources operated under varying excitation and pressure conditions is reported. As an application, the arc lamp is successfully utilized as an illumination source for an intrinsically triggered, wide bandgap SiC photoconductive semiconductor switch (PCSS), where a PCSS ON-state resistance of $500~\Omega $ is achieved.
KW - Arc discharges
KW - gas discharge devices
KW - plasma devices
KW - ultraviolet sources
UR - http://www.scopus.com/inward/record.url?scp=85055880490&partnerID=8YFLogxK
U2 - 10.1109/TPS.2018.2871430
DO - 10.1109/TPS.2018.2871430
M3 - Article
AN - SCOPUS:85055880490
VL - 47
SP - 508
EP - 511
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
SN - 0093-3813
IS - 1
M1 - 8515278
ER -