550-W Ultraviolet exciplex source for pulsed power applications

S. Feathers; J. Stephens; A. Neuber

doi:10.1109/TPS.2018.2871430

550-W Ultraviolet exciplex source for pulsed power applications

S. Feathers, J. Stephens, A. Neuber

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Abstract

The investigation of a high output power, arc lamp exciplex ultraviolet (UV) source for pulsed power applications is presented. The arc lamp generates up to 550 W from XeF^∗ exciplex radiation at 351 nm, totaling to nearly 0.15-mJ total radiated UV energy over the duration of the UV pulse. With an ellipsoidal reflector, the arc lamp produces 400 W/cm² and up to 0.1 mJ of UV light onto a 1-cm² area. A complete experimental investigation of the arc lamp for both XeCl^∗ (308 nm) and XeF^∗ (351 nm) exciplex sources operated under varying excitation and pressure conditions is reported. As an application, the arc lamp is successfully utilized as an illumination source for an intrinsically triggered, wide bandgap SiC photoconductive semiconductor switch (PCSS), where a PCSS ON-state resistance of $500~\Omega $ is achieved.

Original language	English
Article number	8515278
Pages (from-to)	508-511
Number of pages	4
Journal	IEEE Transactions on Plasma Science
Volume	47
Issue number	1
DOIs	https://doi.org/10.1109/TPS.2018.2871430
State	Published - Jan 2019

Keywords

Arc discharges
gas discharge devices
plasma devices
ultraviolet sources

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10.1109/TPS.2018.2871430

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Feathers, S., Stephens, J., & Neuber, A. (2019). 550-W Ultraviolet exciplex source for pulsed power applications. IEEE Transactions on Plasma Science, 47(1), 508-511. [8515278]. https://doi.org/10.1109/TPS.2018.2871430

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abstract = "The investigation of a high output power, arc lamp exciplex ultraviolet (UV) source for pulsed power applications is presented. The arc lamp generates up to 550 W from XeF∗ exciplex radiation at 351 nm, totaling to nearly 0.15-mJ total radiated UV energy over the duration of the UV pulse. With an ellipsoidal reflector, the arc lamp produces 400 W/cm2 and up to 0.1 mJ of UV light onto a 1-cm2 area. A complete experimental investigation of the arc lamp for both XeCl∗ (308 nm) and XeF∗ (351 nm) exciplex sources operated under varying excitation and pressure conditions is reported. As an application, the arc lamp is successfully utilized as an illumination source for an intrinsically triggered, wide bandgap SiC photoconductive semiconductor switch (PCSS), where a PCSS ON-state resistance of $500~\Omega $ is achieved.",

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AB - The investigation of a high output power, arc lamp exciplex ultraviolet (UV) source for pulsed power applications is presented. The arc lamp generates up to 550 W from XeF∗ exciplex radiation at 351 nm, totaling to nearly 0.15-mJ total radiated UV energy over the duration of the UV pulse. With an ellipsoidal reflector, the arc lamp produces 400 W/cm2 and up to 0.1 mJ of UV light onto a 1-cm2 area. A complete experimental investigation of the arc lamp for both XeCl∗ (308 nm) and XeF∗ (351 nm) exciplex sources operated under varying excitation and pressure conditions is reported. As an application, the arc lamp is successfully utilized as an illumination source for an intrinsically triggered, wide bandgap SiC photoconductive semiconductor switch (PCSS), where a PCSS ON-state resistance of $500~\Omega $ is achieved.

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