247 nm solar-blind ultraviolet p-i-n photodetector

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, M. Holtz

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Abstract

We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN Al0.08 Ga0.92 N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 μm diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of ∼3 pA cm2 and high zero-bias resistance of ∼6× 1014 . At 10 V reverse bias the observed responsivity is 62 mAW.

Original languageEnglish
Article number096104
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
StatePublished - Nov 23 2006

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Kuryatkov, V. V., Borisov, B. A., Nikishin, S. A., Kudryavtsev, Y., Asomoza, R., Kuchinskii, V. I., Sokolovskii, G. S., Song, D. Y., & Holtz, M. (2006). 247 nm solar-blind ultraviolet p-i-n photodetector. Journal of Applied Physics, 100(9), [096104]. https://doi.org/10.1063/1.2364049