247 nm solar-blind ultraviolet p-i-n photodetector

V. V. Kuryatkov; B. A. Borisov; S. A. Nikishin; Yu Kudryavtsev; R. Asomoza; V. I. Kuchinskii; G. S. Sokolovskii; D. Y. Song; M. Holtz

doi:10.1063/1.2364049

247 nm solar-blind ultraviolet p-i-n photodetector

V. V. Kuryatkov, B. A. Borisov, S. A. Nikishin, Yu Kudryavtsev, R. Asomoza, V. I. Kuchinskii, G. S. Sokolovskii, D. Y. Song, M. Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN Al0.08 Ga0.92 N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 μm diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of ∼3 pA cm2 and high zero-bias resistance of ∼6× 1014 . At 10 V reverse bias the observed responsivity is 62 mAW.

Original language	English
Article number	096104
Journal	Journal of Applied Physics
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.2364049
State	Published - 2006

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@article{1b62bab6e25d4d378bc0c22549b18824,

title = "247 nm solar-blind ultraviolet p-i-n photodetector",

abstract = "We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN Al0.08 Ga0.92 N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 μm diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of ∼3 pA cm2 and high zero-bias resistance of ∼6× 1014 . At 10 V reverse bias the observed responsivity is 62 mAW.",

author = "Kuryatkov, {V. V.} and Borisov, {B. A.} and Nikishin, {S. A.} and Yu Kudryavtsev and R. Asomoza and Kuchinskii, {V. I.} and Sokolovskii, {G. S.} and Song, {D. Y.} and M. Holtz",

note = "Funding Information: The authors would like to thank Professor H. Temkin for important discussions. Work at Texas Tech University is supported by NSF (ECS-0323640 and ECS-0304224) and the J. F. Maddox Foundation.",

year = "2006",

doi = "10.1063/1.2364049",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "9",

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TY - JOUR

T1 - 247 nm solar-blind ultraviolet p-i-n photodetector

AU - Kuryatkov, V. V.

AU - Borisov, B. A.

AU - Nikishin, S. A.

AU - Kudryavtsev, Yu

AU - Asomoza, R.

AU - Kuchinskii, V. I.

AU - Sokolovskii, G. S.

AU - Song, D. Y.

AU - Holtz, M.

N1 - Funding Information: The authors would like to thank Professor H. Temkin for important discussions. Work at Texas Tech University is supported by NSF (ECS-0323640 and ECS-0304224) and the J. F. Maddox Foundation.

PY - 2006

Y1 - 2006

N2 - We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN Al0.08 Ga0.92 N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 μm diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of ∼3 pA cm2 and high zero-bias resistance of ∼6× 1014 . At 10 V reverse bias the observed responsivity is 62 mAW.

AB - We describe solar-blind p-i-n photodetectors based on short period superlattices of AlN Al0.08 Ga0.92 N. The devices are grown using gas source molecular beam epitaxy with ammonia on transparent sapphire substrates. The cutoff wavelength for the device is 247 nm. For diodes with 150 μm diameter mesas and sidewall surfaces passivated in oxygen plasma, we obtain extremely low dark leakage current of ∼3 pA cm2 and high zero-bias resistance of ∼6× 1014 . At 10 V reverse bias the observed responsivity is 62 mAW.

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U2 - 10.1063/1.2364049

DO - 10.1063/1.2364049

M3 - Article

AN - SCOPUS:33751101565

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 096104

ER -

247 nm solar-blind ultraviolet p-i-n photodetector

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