1.54 μm emitters based on erbium doped InGaN p-i-n junctions

R. Dahal, C. Ugolini, Jingyu Lin, Hongxing Jiang, J. M. Zavada

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)141109
JournalAppl. Phys. Lett.
StatePublished - Oct 8 2010

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