1.54 μm emitters based on erbium doped InGaN p-i-n junctions

R. Dahal; C. Ugolini; J. Y. Lin; H. X. Jiang; J. M. Zavada

doi:10.1063/1.3499654

1.54 μm emitters based on erbium doped InGaN p-i-n junctions

R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, J. M. Zavada

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical vapor deposition and processed into 300×300 μ m² mesa devices. The LEDs exhibit strong emissions at 1.0 and 1.54 μm, due to Er intra- 4f transitions, under forward bias conditions. The emitted EL intensity increases with applied input current without exhibiting saturation up to 70 mA. The integrated power over the near infrared emission, measured at room temperature from the top of a bare chip, is about 2 μW. The results represent a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.

Original language	English
Article number	141109
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3499654
State	Published - Oct 4 2010

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title = "1.54 μm emitters based on erbium doped InGaN p-i-n junctions",

abstract = "We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical vapor deposition and processed into 300×300 μ m2 mesa devices. The LEDs exhibit strong emissions at 1.0 and 1.54 μm, due to Er intra- 4f transitions, under forward bias conditions. The emitted EL intensity increases with applied input current without exhibiting saturation up to 70 mA. The integrated power over the near infrared emission, measured at room temperature from the top of a bare chip, is about 2 μW. The results represent a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.",

author = "R. Dahal and C. Ugolini and Lin, {J. Y.} and Jiang, {H. X.} and Zavada, {J. M.}",

note = "Funding Information: The MOCVD growth and device fabrication efforts are supported by ARO (Grant No. W911NF-09-1-0275) and materials characterization effort is supported by NSF (Grant No. ECCS-0854619). Jiang and Lin gratefully acknowledge the support of Ed and Linda Whitacre Endowed Chair positions through the AT & T Foundation.",

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doi = "10.1063/1.3499654",

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T1 - 1.54 μm emitters based on erbium doped InGaN p-i-n junctions

AU - Dahal, R.

AU - Ugolini, C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J. M.

N1 - Funding Information: The MOCVD growth and device fabrication efforts are supported by ARO (Grant No. W911NF-09-1-0275) and materials characterization effort is supported by NSF (Grant No. ECCS-0854619). Jiang and Lin gratefully acknowledge the support of Ed and Linda Whitacre Endowed Chair positions through the AT & T Foundation.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical vapor deposition and processed into 300×300 μ m2 mesa devices. The LEDs exhibit strong emissions at 1.0 and 1.54 μm, due to Er intra- 4f transitions, under forward bias conditions. The emitted EL intensity increases with applied input current without exhibiting saturation up to 70 mA. The integrated power over the near infrared emission, measured at room temperature from the top of a bare chip, is about 2 μW. The results represent a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.

AB - We present here on the growth, fabrication and electroluminescence (EL) characteristics of light emitting diodes (LEDs) based on Er-doped InGaN active layers. The p-i-n structures were grown using metal organic chemical vapor deposition and processed into 300×300 μ m2 mesa devices. The LEDs exhibit strong emissions at 1.0 and 1.54 μm, due to Er intra- 4f transitions, under forward bias conditions. The emitted EL intensity increases with applied input current without exhibiting saturation up to 70 mA. The integrated power over the near infrared emission, measured at room temperature from the top of a bare chip, is about 2 μW. The results represent a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.

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U2 - 10.1063/1.3499654

DO - 10.1063/1.3499654

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141109

ER -

1.54 μm emitters based on erbium doped InGaN p-i-n junctions

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