1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

R. Dahal, J. Y. Lin, H. X. Jiang, J. M. Zavada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Er doped III-nitride semiconductors are a major field of research aiming to achieve photonic devices with multiple functionalities in photonic integrated circuits (PICs), which are not possible with either Er doped silica glasses or narrow band gap semiconductors like InGaAsP. Emitters and optical amplifiers based on Er doped GaN/InGaN operating at 1.54 μm are expected to be electrically pumped, integratable, temperature insensitive and have high signal gain with low noise. These properties are very attractive for next generation optical network systems where multiple amplification steps are required. We will discuss here the metal organic chemical vapor deposition (MOCVD) growth of Er doped GaN/InGaN epilayers. Further, we report on the fabrication of chip size current injected 1.54 μm emitters and optical amplifiers by heterogeneously integrating MOCVD grown Er doped GaN/InGaN with 365 nm nitride light-emitting diodes. The emitted intensity at 1.54 μm varied almost linearly with input forward current. The feasibility of electrically pumped optical amplifiers for PICs with the advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers will also be discussed.

Original languageEnglish
Title of host publicationOptical Components and Materials VII
DOIs
StatePublished - 2010
EventOptical Components and Materials VII - San Francisco, CA, United States
Duration: Jan 26 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7598
ISSN (Print)0277-786X

Conference

ConferenceOptical Components and Materials VII
CountryUnited States
CitySan Francisco, CA
Period01/26/1001/28/10

Keywords

  • Er
  • GaN
  • IR emitter
  • InGaN
  • Optical gain
  • PL
  • PLE
  • Waveguide amplifier

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    Dahal, R., Lin, J. Y., Jiang, H. X., & Zavada, J. M. (2010). 1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN. In Optical Components and Materials VII [759819] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7598). https://doi.org/10.1117/12.842325