| Original language | English |
|---|---|
| Pages (from-to) | 759819 |
| Journal | Proc. SPIE |
| State | Published - Feb 25 2010 |
1.54 µm emitter and optical amplifier based on Er doped InGaN/GaN
R. Dahal, Jingyu Lin, Hongxing Jiang, J. M. Zavada
Research output: Contribution to journal › Article › peer-review