1.54 µm emitter and optical amplifier based on Er doped InGaN/GaN

R. Dahal, Jingyu Lin, Hongxing Jiang, J. M. Zavada

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)759819
JournalProc. SPIE
StatePublished - Feb 25 2010

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