1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs

Sumi Krishnaswami, Anant Agarwal, Craig Capell, Jim Richmond, Sei Hyung Ryu, John Palmour, Santosh Balachandran, T. Paul Chow, Stephen Bayne, Bruce Geil, Kenneth A. Jones, Charles Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm × 3.38 mm BJT devices with an active area of 3 mm × 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm2 was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm × 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
PublisherTrans Tech Publications Ltd
Pages901-904
Number of pages4
ISBN (Print)0878499636, 9780878499632
DOIs
StatePublished - 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period08/31/0409/4/04

Keywords

  • Bipolar Junction Transistor
  • Current gain
  • Darlington pair

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