@inproceedings{3e523dec238f4ad0b38de40cc9e6dd24,
title = "1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs",
abstract = "1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm × 3.38 mm BJT devices with an active area of 3 mm × 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm2 was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm × 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.",
keywords = "Bipolar Junction Transistor, Current gain, Darlington pair",
author = "Sumi Krishnaswami and Anant Agarwal and Craig Capell and Jim Richmond and Ryu, {Sei Hyung} and John Palmour and Santosh Balachandran and Chow, {T. Paul} and Stephen Bayne and Bruce Geil and Jones, {Kenneth A.} and Charles Scozzie",
year = "2005",
doi = "10.4028/0-87849-963-6.901",
language = "English",
isbn = "0878499636",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "901--904",
booktitle = "Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials",
note = "null ; Conference date: 31-08-2004 Through 04-09-2004",
}