1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs

Sumi Krishnaswami; Anant Agarwal; Craig Capell; Jim Richmond; Sei Hyung Ryu; John Palmour; Santosh Balachandran; T. Paul Chow; Stephen Bayne; Bruce Geil; Kenneth A. Jones; Charles Scozzie

doi:10.4028/0-87849-963-6.901

1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs

Sumi Krishnaswami, Anant Agarwal, Craig Capell, Jim Richmond, Sei Hyung Ryu, John Palmour, Santosh Balachandran, T. Paul Chow, Stephen Bayne, Bruce Geil, Kenneth A. Jones, Charles Scozzie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm × 3.38 mm BJT devices with an active area of 3 mm × 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm², at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm² was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm × 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BV_CEO of 1000 V was measured on both of these devices.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Publisher	Trans Tech Publications Ltd
Pages	901-904
Number of pages	4
ISBN (Print)	0878499636, 9780878499632
DOIs	https://doi.org/10.4028/0-87849-963-6.901
State	Published - 2005
Event	5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy Duration: Aug 31 2004 → Sep 4 2004

Publication series

Name	Materials Science Forum
Volume	483-485
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
Country	Italy
City	Bologna
Period	08/31/04 → 09/4/04

Keywords

Bipolar Junction Transistor
Current gain
Darlington pair

Access to Document

10.4028/0-87849-963-6.901

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Krishnaswami, S., Agarwal, A., Capell, C., Richmond, J., Ryu, S. H., Palmour, J., Balachandran, S., Chow, T. P., Bayne, S., Geil, B., Jones, K. A., & Scozzie, C. (2005). 1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 901-904). (Materials Science Forum; Vol. 483-485). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-963-6.901

Krishnaswami, Sumi ; Agarwal, Anant ; Capell, Craig ; Richmond, Jim ; Ryu, Sei Hyung ; Palmour, John ; Balachandran, Santosh ; Chow, T. Paul ; Bayne, Stephen ; Geil, Bruce ; Jones, Kenneth A. ; Scozzie, Charles. / 1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs. Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Trans Tech Publications Ltd, 2005. pp. 901-904 (Materials Science Forum).

@inproceedings{3e523dec238f4ad0b38de40cc9e6dd24,

title = "1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs",

abstract = "1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm × 3.38 mm BJT devices with an active area of 3 mm × 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm2 was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm × 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.",

keywords = "Bipolar Junction Transistor, Current gain, Darlington pair",

author = "Sumi Krishnaswami and Anant Agarwal and Craig Capell and Jim Richmond and Ryu, {Sei Hyung} and John Palmour and Santosh Balachandran and Chow, {T. Paul} and Stephen Bayne and Bruce Geil and Jones, {Kenneth A.} and Charles Scozzie",

year = "2005",

doi = "10.4028/0-87849-963-6.901",

language = "English",

isbn = "0878499636",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "901--904",

booktitle = "Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials",

}

Krishnaswami, S, Agarwal, A, Capell, C, Richmond, J, Ryu, SH, Palmour, J, Balachandran, S, Chow, TP, Bayne, S, Geil, B, Jones, KA & Scozzie, C 2005, 1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs. in Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Materials Science Forum, vol. 483-485, Trans Tech Publications Ltd, pp. 901-904, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 08/31/04. https://doi.org/10.4028/0-87849-963-6.901

1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs. / Krishnaswami, Sumi; Agarwal, Anant; Capell, Craig; Richmond, Jim; Ryu, Sei Hyung; Palmour, John; Balachandran, Santosh; Chow, T. Paul; Bayne, Stephen; Geil, Bruce; Jones, Kenneth A.; Scozzie, Charles.

Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Trans Tech Publications Ltd, 2005. p. 901-904 (Materials Science Forum; Vol. 483-485).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs

AU - Krishnaswami, Sumi

AU - Agarwal, Anant

AU - Capell, Craig

AU - Richmond, Jim

AU - Ryu, Sei Hyung

AU - Palmour, John

AU - Balachandran, Santosh

AU - Chow, T. Paul

AU - Bayne, Stephen

AU - Geil, Bruce

AU - Jones, Kenneth A.

AU - Scozzie, Charles

PY - 2005

Y1 - 2005

N2 - 1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm × 3.38 mm BJT devices with an active area of 3 mm × 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm2 was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm × 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

AB - 1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm × 3.38 mm BJT devices with an active area of 3 mm × 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mΩ-cm2 was observed at room temperature. The on-resistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm × 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

KW - Bipolar Junction Transistor

KW - Current gain

KW - Darlington pair

UR - http://www.scopus.com/inward/record.url?scp=20144365064&partnerID=8YFLogxK

U2 - 10.4028/0-87849-963-6.901

DO - 10.4028/0-87849-963-6.901

M3 - Conference contribution

AN - SCOPUS:20144365064

SN - 0878499636

SN - 9780878499632

T3 - Materials Science Forum

SP - 901

EP - 904

BT - Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials

PB - Trans Tech Publications Ltd

Y2 - 31 August 2004 through 4 September 2004

ER -

Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J et al. 1000 V, 30 A SiC Bipolar Junction Transistors and integrated darlington pairs. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. Trans Tech Publications Ltd. 2005. p. 901-904. (Materials Science Forum). https://doi.org/10.4028/0-87849-963-6.901