TY - JOUR
T1 - 1000-V, 30-A 4H-SiC BJTs with high current gain
AU - Krishnaswami, Sumi
AU - Agarwal, Anant
AU - Ryu, Sei Hyung
AU - Capell, Craig
AU - Richmond, James
AU - Palmour, John
AU - Balachandran, Santosh
AU - Chow, T. Paul
AU - Bayne, Stephen
AU - Geil, Bruce
AU - Jones, Kenneth
AU - Scozzie, Charles
N1 - Funding Information:
Manuscript received October 26, 2004; revised December 16, 2004. This work was supported in part by the Collaborative Technology Alliance (CTA) in Power and Energy of the Army Research Laboratory (ARL). The review of this letter was arranged by Editor K. T. Kornegay. S. Krishnaswami, A. Agarwal, S.-H. Ryu, C. Capell, J. Richmond, and J. Palmour are with Cree, Inc., Durham, NC 27703 USA. S. Balachandran and T. P. Chow are with the Rensselaer Polytechnic Institute, Troy, NY 12180 USA. S. Bayne, B. Geil, K. Jones, and C. Scozzie are with the Army Research Laboratory, Adelphi, MD 20783 USA. Digital Object Identifier 10.1109/LED.2004.842731
PY - 2005/3
Y1 - 2005/3
N2 - This paper presents the development of 1000 V, 30 A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT devices with an active area of 3 × 3 mm2 showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40, along with a low specific on-resistance of 6.0 mΩ·cm2 was observed at room temperature. These results show significant improvement over state-of-the-art. High temperature current-voltage characteristics were also performed on the large-area bipolar junction transistor device. A collector current of 10 A is observed at VCE = 2 V and IB = 600 mA at 225 °C. The on-resistance increases to 22.5 mΩ·cm2 at higher temperatures, while the dc current gain decreases to 30 at 275 °C. A sharp avalanche behavior was observed at a collector voltage of 1000 V. Inductive switching measurements at room temperature with a power supply voltage of 500 V show fast switching with a turn-off time of about 60 ns and a turn-on time of 32 ns, which is a result of the low resistance in the base.
AB - This paper presents the development of 1000 V, 30 A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT devices with an active area of 3 × 3 mm2 showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40, along with a low specific on-resistance of 6.0 mΩ·cm2 was observed at room temperature. These results show significant improvement over state-of-the-art. High temperature current-voltage characteristics were also performed on the large-area bipolar junction transistor device. A collector current of 10 A is observed at VCE = 2 V and IB = 600 mA at 225 °C. The on-resistance increases to 22.5 mΩ·cm2 at higher temperatures, while the dc current gain decreases to 30 at 275 °C. A sharp avalanche behavior was observed at a collector voltage of 1000 V. Inductive switching measurements at room temperature with a power supply voltage of 500 V show fast switching with a turn-off time of about 60 ns and a turn-on time of 32 ns, which is a result of the low resistance in the base.
KW - 4H-SiC
KW - Current gain
KW - High-speed switching
KW - Power BJT
UR - http://www.scopus.com/inward/record.url?scp=20144373755&partnerID=8YFLogxK
U2 - 10.1109/LED.2004.842731
DO - 10.1109/LED.2004.842731
M3 - Article
AN - SCOPUS:20144373755
SN - 0741-3106
VL - 26
SP - 175
EP - 177
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
ER -