TY - GEN
T1 - 0.6-2.0 V, All-CMOS temperature sensor front-end using bulk-driven technology
AU - Block, Scott T.
AU - Li, Yiran
AU - Yang, Yi
AU - Li, Changzhi
PY - 2010
Y1 - 2010
N2 - An All-CMOS temperature sensor front-end is designed to work with a supply voltage range of 0.6 to 2.0 volts, and temperature range from 0 to 120°C. The flexibility of 0.6 to 2.0 volt operation was made possible by the use of a bulk-driven op amp. Using all CMOS allows for low voltage and smaller chip area. UMC 0.13μm technology was used for this design. This sensor produces three outputs, two voltages proportional to absolute temperature (PTAT), and one voltage independent of absolute temperature (IOAT). The temperature sensor front-end produces an approximate average reference voltage of 249mV with variation of ±0.7mV, a temperature coefficient of 18.2ppm/°C at VDD 0.6V to 19.2ppm/°C at VDD 2.0V, and a voltage coefficient of 290ppm/V at 0°C to 657ppm/V at 120°C. The design produces two linear PTAT voltages with approximate temperature sensitivity of 0.28mV/°C and 0.84mV/°C (Vtemp0 and Vtemp1 respectively) and voltage coefficients of 113.6ppm/V at 0°C, 450ppm/V at 120°C for Vtemp0 and 501.4ppm/V at 0°C, 1904ppm/V at 120°C for Vtemp1. The design has a simulated PSRR of 54dB at 100Hz and 0°C with a supply voltage of 0.6V.
AB - An All-CMOS temperature sensor front-end is designed to work with a supply voltage range of 0.6 to 2.0 volts, and temperature range from 0 to 120°C. The flexibility of 0.6 to 2.0 volt operation was made possible by the use of a bulk-driven op amp. Using all CMOS allows for low voltage and smaller chip area. UMC 0.13μm technology was used for this design. This sensor produces three outputs, two voltages proportional to absolute temperature (PTAT), and one voltage independent of absolute temperature (IOAT). The temperature sensor front-end produces an approximate average reference voltage of 249mV with variation of ±0.7mV, a temperature coefficient of 18.2ppm/°C at VDD 0.6V to 19.2ppm/°C at VDD 2.0V, and a voltage coefficient of 290ppm/V at 0°C to 657ppm/V at 120°C. The design produces two linear PTAT voltages with approximate temperature sensitivity of 0.28mV/°C and 0.84mV/°C (Vtemp0 and Vtemp1 respectively) and voltage coefficients of 113.6ppm/V at 0°C, 450ppm/V at 120°C for Vtemp0 and 501.4ppm/V at 0°C, 1904ppm/V at 120°C for Vtemp1. The design has a simulated PSRR of 54dB at 100Hz and 0°C with a supply voltage of 0.6V.
KW - CMOS
KW - independent of absolute temperature (IOAT)
KW - low voltage
KW - proportional to absolute temperature (PTAT)
KW - reference voltage
KW - sub-1 V operation
KW - temperature sensor
UR - http://www.scopus.com/inward/record.url?scp=80052013676&partnerID=8YFLogxK
U2 - 10.1109/DCAS.2010.5955038
DO - 10.1109/DCAS.2010.5955038
M3 - Conference contribution
AN - SCOPUS:80052013676
SN - 9781424495344
T3 - Proceedings of the 2010 IEEE Dallas Circuits and Systems Workshop: Design Automation, Methodologies and Manufacturability, DCAS 2010
BT - Proceedings of the 2010 IEEE Dallas Circuits and Systems Workshop
T2 - 2010 IEEE Dallas Circuits and Systems Workshop: Design Automation, Methodologies and Manufacturability, DCAS 2010
Y2 - 17 October 2010 through 18 October 2010
ER -