TY - JOUR
T1 - α-MoO3 as a Conductive 2D Oxide
T2 - Tunable n-Type Electrical Transport via Oxygen Vacancy and Fluorine Doping
AU - Crowley, Kyle
AU - Ye, Gaihua
AU - He, Rui
AU - Abbasi, Kevin
AU - Gao, Xuan P.A.
N1 - Publisher Copyright:
© 2018 American Chemical Society.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - Layered transition metal oxides remain a relatively unexplored front in the study of two-dimensional (2D) van der Waals materials, providing opportunities to further advance semiconductor physics and devices in a novel class of atomically thin crystals. It is usually uncommon to observe tunable electronic characteristics or achieve field effect control in these materials, given their wide band gaps and insulating nature. However, when these oxides are manipulated via doping or intercalation with new ion species, the band gap, carrier concentration, and field effect mobility can be affected, as well. Herein, we conduct a study to dope multilayer nanoflakes of α-MoO3 with H+ ion intercalation, which creates oxygen vacancies and facilitates n-type conduction. Devices are characterized with controllable electron densities in the range of 1019-1021/cm3 and field effect gating behavior with typical field effect mobilities of 0.1 cm2/Vs. Furthermore, both wet-etching and dry-etching techniques are conducted to dope the lattice with F ions. It is found that fluorine doping is an effective reversible method to produce devices with enhanced ON-OFF switching capability during electrical gating. These advancements in controlling the n-type conductivity of nanostructured α-MoO3 may further enhance its potential in various applications such as sensing, catalysis, or as flexible electrodes in batteries.
AB - Layered transition metal oxides remain a relatively unexplored front in the study of two-dimensional (2D) van der Waals materials, providing opportunities to further advance semiconductor physics and devices in a novel class of atomically thin crystals. It is usually uncommon to observe tunable electronic characteristics or achieve field effect control in these materials, given their wide band gaps and insulating nature. However, when these oxides are manipulated via doping or intercalation with new ion species, the band gap, carrier concentration, and field effect mobility can be affected, as well. Herein, we conduct a study to dope multilayer nanoflakes of α-MoO3 with H+ ion intercalation, which creates oxygen vacancies and facilitates n-type conduction. Devices are characterized with controllable electron densities in the range of 1019-1021/cm3 and field effect gating behavior with typical field effect mobilities of 0.1 cm2/Vs. Furthermore, both wet-etching and dry-etching techniques are conducted to dope the lattice with F ions. It is found that fluorine doping is an effective reversible method to produce devices with enhanced ON-OFF switching capability during electrical gating. These advancements in controlling the n-type conductivity of nanostructured α-MoO3 may further enhance its potential in various applications such as sensing, catalysis, or as flexible electrodes in batteries.
KW - 2D material
KW - Raman
KW - doping
KW - molybdenum trioxide
KW - oxide
KW - transport
UR - http://www.scopus.com/inward/record.url?scp=85070535216&partnerID=8YFLogxK
U2 - 10.1021/acsanm.8b01600
DO - 10.1021/acsanm.8b01600
M3 - Article
AN - SCOPUS:85070535216
VL - 1
SP - 6407
EP - 6413
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
IS - 11
ER -