Engineering & Materials Science
Gas source molecular beam epitaxy
Molecular beam epitaxy
Sapphire
Superlattices
Semiconductor quantum wells
Photoluminescence
Substrates
Ammonia
Cathodoluminescence
Optical properties
Epitaxial layers
Light emitting diodes
Vapor phase epitaxy
Ultraviolet radiation
Buffer layers
Photoconductive switches
Epitaxial growth
Ohmic contacts
Phonons
Reflection high energy electron diffraction
Hole concentration
Semiconductor switches
Luminescence
Plasmas
Temperature
Hydrides
Nitrides
Electric properties
Etching
Silicon
Energy gap
Wavelength
Hydrazine
X rays
Growth temperature
Surface morphology
Electrons
Doping (additives)
Diffraction
Photodetectors
X ray diffraction
Nanotubes
Raman scattering
Ultraviolet detectors
Nitridation
Surface roughness
Algae
Epilayers
Plasma etching
Fabrication
Indium
Electric potential
Contact resistance
Chlorine
Annealing
Film thickness
Nitrogen
Crystals
Screw dislocations
Dark currents
Secondary ion mass spectrometry
Atomic force microscopy
Wet etching
Metals
Spectroscopy
Light emission
Ammonium hydroxide
Monolayers
Semiconductor alloys
Diodes
Optoelectronic devices
Carrier concentration
Physics & Astronomy
molecular beam epitaxy
ammonia
superlattices
gases
quantum wells
light emitting diodes
cathodoluminescence
epitaxy
photoluminescence
optical properties
vapor phase epitaxy
phonons
flat surfaces
etching
electrical properties
nitrogen
buffers
hydrazines
algae
luminescence
plasma etching
mesas
nitrides
photometers
temperature dependence
hydrides
electric contacts
x ray diffraction
reflectance
diffraction
x rays
silicon
fins
metals
activation energy
light emission
chlorine
high energy electrons
dimethylhydrazines
emitters
switches
temperature
metalorganic chemical vapor deposition
hydrogen
templates
nanotubes
wavelengths
room temperature
high resolution
electron diffraction
dark current
diodes
wafers
fabrication
indium
ultraviolet radiation
energy
low noise
p-n junctions
roughness
contact resistance
cracks
atomic force microscopy
low resistance
planar structures
excitons
characterization
secondary ion mass spectrometry
carrier injection
decay
surface roughness
Chemical Compounds
Gas source molecular beam epitaxy
aluminum gallium nitride
Molecular beam epitaxy
Aluminum Oxide
Semiconductor quantum wells
Superlattices
Ammonia
Photoluminescence
Vapor phase epitaxy
Substrates
Cathodoluminescence
gallium arsenide
Epitaxial layers
Optical properties
Ultraviolet radiation
Buffer layers
Light emitting diodes
Silicon
Ohmic contacts
Epitaxial growth
Hole concentration
Phonons
Hydrides
Photoconductive switches
Etching
Nitrides
Temperature
Plasmas
Wavelength
Surface morphology
Doping (additives)
Electric properties
Reflection high energy electron diffraction
Indium
X ray diffraction
Nanotubes
Metals
X rays
Ultraviolet detectors
Diffraction
Photodetectors
Chlorine
Growth temperature
Epilayers
Plasma etching
Electrons
Contact resistance
Annealing
Film thickness
Raman scattering
nanofin
Dark currents
Secondary ion mass spectrometry
hydrazine
Nitrogen
Energy gap
Semiconductor switches
Crystals
Wet etching
chalcopyrite
Surface roughness
Direction compound
Ammonium Hydroxide
Luminescence
Fabrication
Hydrogen
Semiconductor alloys
Diodes
Atomic force microscopy
Optoelectronic devices
Light emission
Carrier concentration