Projects per year
Fingerprint Dive into the research topics where Jingyu Lin is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Grants
Wide bandgap semiconductor optical phased arrays (OPAs)
Li, C., Jiang, H., Lin, J. & Li, J.
DOD Air Force Research Laboratory-Federal
05/1/19 → …
Project: Research
Large size wafers of erbium doped GaN crystals as high energy laser gain medium
09/1/17 → …
Project: Research
Ultra compact trace organic chemical and water/ice imager (TOCI)
NASA/Photon Systems, Inc.-Federal
08/15/17 → …
Project: Research
Scholarly Research
Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry
McKay, M. A., Li, J., Lin, J. Y. & Jiang, H. X., Feb 7 2020, In : Journal of Applied Physics. 127, 5, 053103.Research output: Contribution to journal › Article
Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology
Mitchell, B., Timmerman, D., Zhu, W., Lin, J. Y., Jiang, H. X., Poplawsky, J., Ishii, R., Kawakami, Y., Dierolf, V., Tatebayashi, J., Ichikawa, S. & Fujiwara, Y., Jan 7 2020, In : Journal of Applied Physics. 127, 1, 013102.Research output: Contribution to journal › Article
Probing the surface oxidation process in hexagonal boron nitride epilayers
Wang, Q. W., Li, J., Lin, J. Y. & Jiang, H. X., Feb 1 2020, In : AIP Advances. 10, 2, 025213.Research output: Contribution to journal › Article
Open Access
Critical thickness of hexagonal GaBN/BN heterostructures
Wang, Q., Li, J., Lin, J. & Jiang, H., May 2019, In : J. Appl. Phys.. p. 205703Research output: Contribution to journal › Article
Critical thickness of hexagonal GaBN/BN heterostructures
Wang, Q. W., Li, J., Lin, J. Y. & Jiang, H. X., May 28 2019, In : Journal of Applied Physics. 125, 20, 205703.Research output: Contribution to journal › Article
Scholarly Activities
(Invited) Hexagonal boron nitride extreme bandgap semiconductor: Epitaxial growth and exploration of active devices
Jingyu Lin (Speaker)
Sep 18 2018
Activity: Talk or presentation › Invited talk
(Plenary) Hexagonal BN for UV photonics devices
Jingyu Lin (Speaker)
Dec 10 2018
Activity: Talk or presentation › Invited talk
(Invited) MOCVD growth of h-BN epilayers
Jingyu Lin (Speaker)
Jun 4 2018
Activity: Talk or presentation › Oral presentation
(Invited) Erbium-doped GaN bulk crystals as a gain medium for eye-safe high-energy lasers
Jingyu Lin (Speaker)
Jan 29 2018
Activity: Talk or presentation › Oral presentation
(Invited) Nitride MicroLEDs and Displays
Jingyu Lin (Speaker)
Aug 30 2018
Activity: Talk or presentation › Invited talk