Assessing the Role of Non-Local Trap-to-Band Impact Ionization in 4H-SiC Photoconductive Switches Containing Deep Defects Aimed at Enhanced Hold-off Voltages

Activity: Talk or presentationOral presentation

PeriodJul 1 2016Jul 31 2016
Held atInstitute of Electrical and Electronics Engineers
Degree of RecognitionInternational